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Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2005),
  • paper JTuC92

Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

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Abstract

Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0.23Ga0.77As/GaNxAs1−x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.

© 2005 Optical Society of America

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