Abstract

Professor Nakamura will present current research on GaN-based emitting devices and crystal growth. He will explain how a high-quality thick A, M-plain GaN epitaxial growth using a lateral epitaxial overgrowth (LEO) by hydride vapor phase epitaxy (HVPE) was achieved. Attendees will learn about challenges for new device structures such as micro cavity light-emitting diodes (MC-LED), cone-shaped surface LEDs and others. Full-text article is not available.

© 2005 Optical Society of America