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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2005),
  • paper CWI3

High-Speed 850nm AlGaAs/GaAs Vertical Cavity Surface Emitting Laser with Low Parasitic Capacitance Fabricated Using BCB Planarization Technique

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Abstract

12.5Gbps operation of low-k benzocyclobutene (BCB)-planarized 850nm AlGaAs-based VCSEL is presented. The chip capacitance is 70% reduced from that of conventional SiN-passivated one. The VCSEL exhibits very high relaxation oscillation frequency of 12GHz with stable operation at 70oC over 750 hours.

© 2005 Optical Society of America

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