Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2005),
  • paper CTuE1

Gain and Photoluminescence Dynamics in Dilute Nitride Semiconductor Laser Materials

Not Accessible

Your library or personal account may give you access

Abstract

The gain and photoluminescence dynamics is calculated microscopically for several GaInNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model.

© 2005 Optical Society of America

PDF Article
More Like This
Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5μm range

C. Schlichenmaier, A. Thränhardt, T. Meier, H. Grüning, P. J. Klar, W. Heimbrodt, S. W. Koch, W. W. Chow, J. Hader, and J. V. Moloney
JTuC92 Conference on Lasers and Electro-Optics (CLEO:S&I) 2005

Microscopic modeling of the optical properties of dilute nitride semiconductor gain materials

C. Bückers, S. W. Koch, A. Thränhardt, J. Hader, J. V. Moloney, C. Karcher, W. Heimbrodt, B. Kunert, K. Volz, and W. Stolz
CB8_2 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2009

Absorber and gain dynamics in dilute nitride mode-locked lasers

Jiri Thoma, Tomasz Ochalski, Tomasz Piwonski, Stephen P. Hegarty, Guillaume Huyet, Kimmo Haring, Janne Puustinen, and Mircea Guina
JTuD98 Conference on Lasers and Electro-Optics (CLEO:S&I) 2010

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.