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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2005),
  • paper CMFF3

Fabrication of All-Epitaxial Semiconductor Laser Using Selective Interface Fermi-Level Pinning

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Abstract

All epitaxial fully planarized GaAs based semiconductor lasers are demonstrated using a selective Fermi-level pinning at a heterointerface. The results show that this method provides efficient self-aligned current- and mode- confinement and mode controllability by intracavity patterning.

© 2005 Optical Society of America

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