High performance 2.4 μm GaInAsSb/AlGaAsSb laser diodes

A. Salhi; Y. Rouillard; J. Angellier; M. Garcia; X. Marcadet

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
Technical Digest (CD) (Optica Publishing Group, 2004),
paper CMC3

High performance 2.4 μm GaInAsSb/AlGaAsSb laser diodes

A. Salhi, Y. Rouillard, J. Angellier, M. Garcia, and X. Marcadet

Conference on Lasers and Electro-Optics 2004

San Francisco, California United States
16–21 May 2004
ISBN: 1-55752-770-9

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Antimonide 2-5µm Lasers (CMC)

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A. Salhi, Y. Rouillard, J. Angellier, M. Garcia, and X. Marcadet, "High performance 2.4 μm GaInAsSb/AlGaAsSb laser diodes," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optica Publishing Group, 2004), paper CMC3.

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Abstract

Strained triple-quantum-well (TQW) GaInAsSb/AlGaAsSb laser diodes were fabricated. Internal losses as low as 4 cm⁻¹ and threshold current density per quantum well as low as 34 A/cm² for a 3 mm long-cavity were obtained.

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