Phase modulators based on III-V semiconductors are attractive since, unlike lithium niobate (LN) or electroabsorption (EA) based modulators, they can provide both monolithic integration and high optical saturation power. High-speed and high-power integrated modulators with Vπ<1 volt are needed for advanced RF-photonic fiber optic links. Theoretically, one order of magnitude reduction in Vπ has been predicted using asymmetric coupled quantum wells in III-V based phase modulators [1]. However, to the best of our knowledge, this is the first experimental demonstration of electrorefraction enhancement in the important 1.3 and 1.55 µm wavelength ranges.

© 2003 Optical Society of America

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