Phase modulators based on III-V semiconductors are attractive since, unlike lithium niobate (LN) or electroabsorption (EA) based modulators, they can provide both monolithic integration and high optical saturation power. High-speed and high-power integrated modulators with Vπ<1 volt are needed for advanced RF-photonic fiber optic links. Theoretically, one order of magnitude reduction in Vπ has been predicted using asymmetric coupled quantum wells in III-V based phase modulators . However, to the best of our knowledge, this is the first experimental demonstration of electrorefraction enhancement in the important 1.3 and 1.55 µm wavelength ranges.
© 2003 Optical Society of AmericaPDF Article