Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
  • Technical Digest (Optica Publishing Group, 2003),
  • paper CThM34

New low temperature femto-second laser annealing method for TFT fabrication technology

Not Accessible

Your library or personal account may give you access

Abstract

Described new method of silicon laser annealing is based on sequential lateral solidification technique, uses femto-second high power laser and has several advantages (large annealed boundary free area, lower temperature) compared to other annealing methods.

© 2003 Optical Society of America

PDF Article
More Like This
New low temperature poly-silicon fabrication technique by near infrared femto-second laser annealing

Yi-Chao Wang, Alexei K. Zaitsev, Ci-Ling Pan, and Jia-Min Shieh
CThD1 Conference on Lasers and Electro-Optics (CLEO:S&I) 2004

Excimer laser annealing process for polysilicon TFT on glass and plastic substrates

C.H. Liao, M.C. Wang, An Shih, and Si-Chcn Lee
P2_32 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2001

Advanced Laser Annealing Technology in FPD Industries

Tomoyuki Akashi, Toshio Kudo, and Kazunori Yamazaki
PTuB3 Photonic Applications Systems Technologies Conference (CLEO:A&T) 2004

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.