Abstract

Due to their wide bandgaps and relatively high potential barriers confining the active region, group-III-nitride-based light sources are expected to operate at significantly higher temperatures than their longer-wavelength counterparts. In an earlier study, data on efficient performance of blue and green InGaN-based single-quantum-well (SQW) LEDs up to 450 K were reported [1]. Here, we present new results on high-temperature performance of ultra-violet LEDs, including the effects of temperature on I-V and L-I characteristics up to 600 K.

© 2003 Optical Society of America

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