Abstract

This paper presents the design and performance of antimonide-based, type-I, quantum-well diode lasers. Using 1.5-% compressively strained InGaAsSb quantum wells, the quaternary’s miscibility gap was avoided to produce room-temperature devices emitting at 2.5 and 2.8 µm. The 2.5-µm devices output 1 W continuous wave and nearly 5 W in pulsed operation. Modal gain measurements show internal losses less than 4 cm–1. This design should produce room-temperature diode lasers with wavelengths greater than 3 µm.

© 2003 Optical Society of America

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