Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper CTuW5

Spontaneous Emission Measurements of Tensile Strained GalnP Laser Diodes

Not Accessible

Your library or personal account may give you access

Abstract

Measurements of the spontaneous recombination current, quasi-fermi level separation and gain spectra as a function of current density provide a complete characterisation of the semiconductor laser gain medium. This is particularly useful for analysing the benefits of strain in, for example, GalnP short wavelength laser diodes. In this work we present a novel technique that enables us to measure both the TE and TM polarised true spontaneous emission spectra of GalnP tensile strained devices as a function of quasi-fermi level separation. Using these results we are able to assess the affect of strain on all the significant recombination pathways within the device fora given value of gain requirement.

© 2002 Optical Society of America

PDF Article
More Like This
Strained GalnP/AlGaInP quantum well diode lasers

Randall S. Geels and David P. Bour
MB1 OSA Annual Meeting (FIO) 1992

1.55 μm tensile strained GalnNAs/InP laser diodes performances

B. Messant, M. Boutillier, O. Gauthier-Lafaye, S. Bonnefont, B. Dagens, F. Alexandre, H. Carrere, X. Marie, and F. Lozes-Dupuy
CB8_5 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2007

Spatially-resolved Spectroscopic Strain Measurements at High-power Diode Laser Bars

J. W. Tomm, A. Gerhardt, J. -P. Landesman, P. Galtier, Y. Sainte-Marie, and J. Nagle
CThY5 Conference on Lasers and Electro-Optics (CLEO:S&I) 2002

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved