Abstract

The conversion of AIGaAs alloys to Al_xO_y has received much attention for a wide variety of applications.^1,2,3 Rarely, however, do such applications require large-scale lateral oxidation (i.e 100s of microns). The poster will describe oxidation of AlAs to Al_xO_y for use as a broadband saturable Bragg reflector (SBR) where an Al_xO_y/GaAs mirror with lateral dimensions >300 pm is required. For the SBR structure described below, the simulated bandwidth extends from 1200 nm to 1800 nm with greater than 99.5% reflectivity.

© 2002 Optical Society of America