Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper CTuK15

Ge Quantum Dots Sandwiched between Two Thick SI Blocking Layers to Increase High Detectivity

Not Accessible

Your library or personal account may give you access

Abstract

In Fig. 1 are shown the voltage characteristics of the dark current (solid curves) and 300 K-back- ground photocurrent (dash curve). Comparing these two currents, the background-limited performance can be observed at 50 K when the detector is operated under +0.33 V. The lower the operating temperature is, the higher the applied voltage is. For the dark current at low temperature, it is obvious that the current is divided into two regimes. One of them is dominated by the thermionic emission under low biases. The other is dominated by the thermally assisted tunneling under high bias.

© 2002 Optical Society of America

PDF Article
More Like This
Influence of the thickness variation of the SiOx layer on the Si Quantum Dots based MOSLED

Bo-Han Lai, Chih-Hsien Cheng, and Gong-Ru Lin
798703 Asia Communications and Photonics Conference and Exhibition (ACP) 2010

Room Temperature Operation of Resonant Tunneling Quantum Dot Infrared Detectors

S. Chakrabarti, X. H. Su, G. Ariyawansa, A. G. U. Perera, and P. Bhattacharya
CTuY5 Conference on Lasers and Electro-Optics (CLEO:S&I) 2005

Quantum-well Assisted Tunneling Infection Quantum-dot Lasers

S.L. Chuang and N. Holonyak
CTuW6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2002

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.