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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper CTuA2

Buried Selectively-oxidized AIGaAs Structures Grown on Nonplanar Substrates for Device Applications

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Abstract

High aluminum content AlxGa1−xAs is known to t>e controllably oxidizable under elevated temperature in the presence of water vapor.1 Oxidized AlxGa1−xAs exhibits properties that make them desirable for device applications, such as being highly selective on Al composition, electri- cally insulating and a low refractive index. For device designs such as distributed feedback (DFB) or distributed Bragg reflector (DBR) lasers, it’s very important to form an efficient broadband DBR grating. Typical DFB and DBR lasers have weak efficiency gratings due to small refractive lndex differences. As a result, a large number of gating pairs (greater than 1000) are required to generate a wider stopband in its reflectivity spectrum.

© 2002 Optical Society of America

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