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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper CThO60

Temperature-induced Carrier Redistribution Among Nonidentical Multiple Quantum Wells

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Abstract

Nonidentical multiple quantum wells (MQWs) have been widely used for broadening gain bandwidth of semiconductor lasers and amplifiers.1–3 However, carrier distribution among those MQWs is not uniform and thus complicates actual gain profiles.4 In this work, we further explore the dependence of carrier distribution on temperature and discover that temperature characteristics of semiconductor lasers with nonidentical MQWs are very different from conventional ones with identical MQWs

© 2002 Optical Society of America

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