Abstract
Nonidentical multiple quantum wells (MQWs) have been widely used for broadening gain bandwidth of semiconductor lasers and amplifiers.1–3 However, carrier distribution among those MQWs is not uniform and thus complicates actual gain profiles.4 In this work, we further explore the dependence of carrier distribution on temperature and discover that temperature characteristics of semiconductor lasers with nonidentical MQWs are very different from conventional ones with identical MQWs
© 2002 Optical Society of America
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