Abstract
The measurement of spontaneous emission (SE) can provide useful information on the below-threshold and above-threshold operation of vertical-cavity surface-emitting lasers (VSELs). Below threshold, the SE spectra reflect the transition energies of the quantum-well active region. Above threshold, measuring the SE power, which is proportional to the square root of the carrier density, as a function of current can show whether carrier pinning occurs which reflects high spatial overlap between the gain and mode distributions. Several groups have measured the side emission power and correlated this to SE power.1,2 Other group have measured the SE spectra from the top facet using filters or angled coupling.3 4
© 2002 Optical Society of America
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