Abstract
We have fabricated ultrafast photoconductive switches by nano-anodization process using Atomic Force Microscope (AFM) on nano-cluster of InGaAs. The thickness of the nano-cluster layer is 2000 nm, and grown on a InAlAs buffer layer on InP substrate. The nano-cluster makes the carrier lifetime shorter and the density of deep level may be reduced compared to low-temperature grown GaAs. Nano-cluster layer is made by molecular beam epitaxy(MBE) at the growth temperature of 470°C. The streak pattern of the Reflection of high energy electron diffraction(RHEED) was observed clearly. The AFM image of the InGaAs nano-cluster layer is shown in figure 1. The RMS roughness is 0.34 nm, though we can find small pits on the surface. The nano-cluster layer was grown on InAIAs layer as a current block layer to reduce the carrier transit time. The thin nano-clustev layer layer absorbs the light and photo-excited carriers move in this layer. The absorption coefficient of InAIAs layer is much less than the InGaAs at the wavelength of 780 nm. So, the InAIAs layer acts as a current
© 2002 Optical Society of America
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