Abstract
Laterally ordered, patterned subwavelength sized nitride structures are of interest for novel blue/ultraviolet light emitters as spontaneous and stimulated emission may be enhanced in these artificial structures. We describe a two-fold approach to produce such arrayed pattern of InGaN/GaN MQWs heterostructures by electron beam lithography ( ~ 100 nm feature size) and by pattern transfer from self-organized porous alumina (~50 nm). Spontaneous emission and light extraction of such subwavelength scale structure have been studied and a pn-junction structure has been fabricated for current injection into the arrays of isolated nanoscale posts.
© 2002 Optical Society of America
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