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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper CFG1

Characteristics of Intersubband Absorption at Optical Communication Wavelengths in GaN/AIN Multiple Quantum Wells

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Abstract

Intersubband transition (ISBT) at optical communication wavelengths has become a focus of attention.1,2 In particular, ISBT in GaN multiple quantum wells (MQWs) is a promising phenomenon for application to all-optical switching devices that operate at a bit rate higher than 1 Tb/s, because the carrier relaxation time is extremely short (e.g. 150 fs at 4.5 μm and 370 fs at 1.7 pm).3,4 So far, ISBT at a wavelength of 1.35 μm has been reported for GaN/Al0.85Ga0.15N coupled double quantum wells.5 Here, we report ISBT at 1.3-1.5 μm in GaN/AIN MQW structure stacked with single quantum wells. By adopting AIN, the highest energy barrier can be achieved for a GaN well, which leads to good carrier confinement at the upper level. We also measured the saturation intensity, which is a necessary parameter for device designs.

© 2002 Optical Society of America

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