Abstract
Intersubband transition (ISBT) at optical communication wavelengths has become a focus of attention.1,2 In particular, ISBT in GaN multiple quantum wells (MQWs) is a promising phenomenon for application to all-optical switching devices that operate at a bit rate higher than 1 Tb/s, because the carrier relaxation time is extremely short (e.g. 150 fs at 4.5 μm and 370 fs at 1.7 pm).3,4 So far, ISBT at a wavelength of 1.35 μm has been reported for GaN/Al0.85Ga0.15N coupled double quantum wells.5 Here, we report ISBT at 1.3-1.5 μm in GaN/AIN MQW structure stacked with single quantum wells. By adopting AIN, the highest energy barrier can be achieved for a GaN well, which leads to good carrier confinement at the upper level. We also measured the saturation intensity, which is a necessary parameter for device designs.
© 2002 Optical Society of America
PDF ArticleMore Like This
K. Hoshino, T. Someya, M. Helm, K. Hirakawa, and Y. Arakawa
CWB1 Conference on Lasers and Electro-Optics (CLEO:S&I) 2000
J. D. Heber, C. Gmachl, H. M. Ng, A. Y. Cho, and S.-N. G. Chu
CFH2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2002
Noria Iizuka, Kei Kaneko, Nobuo Suzuki, Takashi Asano, Susumu Noda, and Osamu Wada
CWP2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2000