Abstract

Gallium nitride (GaN) materials have been intensively studied for ultraviolet and blue optical devices, and, due to advances in GaN crystal growth technology, device performance is improving. With this material quality improvement of GaN, the prospects for heterogeneous integration of GaN devices with host substrates are now of interest for applications which use GaN optoelectronic devices which can be aided by electronic processing such as image processing for integrated UV optical imaging arrays. Thus, a great deal of recent research into GaN growth and integration has focused upon the demonstration of device quality GaN epitaxial material followed by an integration process.¹²

© 2002 Optical Society of America