InGaAsN quantum well structures for long-wavelength lasers

Henning Riechert

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2001),
paper CTuW5

InGaAsN quantum well structures for long-wavelength lasers

Henning Riechert

Conference on Lasers and Electro-Optics 2001

Baltimore, Maryland United States
6–10 May 2001
ISBN: 1-55752-662-1

From the session
Nitride Quantum Wells and Nanostructures (CTuW)

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H. Riechert, "InGaAsN quantum well structures for long-wavelength lasers," in Conference on Lasers and Electro-Optics, J. Kafka, K. Vahala, R. Williamson, and A. Willner, eds., OSA Technical Digest (Optica Publishing Group, 2001), paper CTuW5.

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Abstract

We report on the growth of this material by solid source molecular beam epitaxy (MBE) using an RF-coupled plasma source to generate reactive nitrogen from N₂. Based on optical and structural characterisation we will discuss carrier localisation, nonuniformity in compositioe, local bonding arrangement as weli as the influence of the post-growth annealing treatment commonly used for this material.

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