Abstract

In GaAsNSb/GaAs QWs were grown by solid source molecular beam epitaxy using a N2 radio frequency (RF) plasma source. X-ray diffraction (XRD), reflection high-energy electron diffraction (RHEED) and transmission electron microscopy (TEM) studies indicate that Sb suppresses the three dimensional growth and improves the interface of the QWs, acting as a surfactant. The effect of excess Sb flux on the optical properties of InGaAsN/GaAs QWs was investigated by photoluminescence. The PL peak intensity increases and the FWHM decreases with increasing Sb flux, indicating the enhancement of photoluminescence efficiency of InGaAsN/GaAs QWs with introduction of Sb flux. However, the PL peak wavelength of InGaAsNSb/GaAs QWs does not shift when Sb flux is less than 2×10⁻⁷ torr, indicating negligible Sb incorporation. Further increase of Sb flux results in a decreased PL intensity and a red shift of the PL peak wavelength from InGaAsNSb/GaAs QWs, indicative of incorporation of Sb. Sb incorporation was also investigated by secondary ion mass spectroscopy (SIMS). A 1.53 μm photoluminescence was obtained from InGaAsNSb/GaAs multiple quantum wells (MQW) at room temperature, which demonstrates the feasibility of InGaAsNSb for 1.55 μm lasers. InGaAsNSb/GaAs QW broad area lasers were fabricated to study the effect of adding Sb on the laser performance. A low threshold of 1.02 ka/cm’ and a high characteristic temperature of 92 K were achieved for 1.3 μm InGaAsNSb/GaAs MQW lasers and lasing up to 105°C was observed.

© 2001 Optical Society of America