Abstract
GaAs-based 1.3 μm vertical cavity surface emitting lasers (VCSF.Ls) are highly desirable for optical data communication. One of the most promising approaches is to use GaAsSb/GaAs quantum wells as the laser active region.1 Due to the large compressive strain necessary for the GaAsSb layer to reach 1.3 μm, it can be prohibitive to use multiple QWs without compensating the strain. This paper reports GaAsSb/GaAs active layers sandwiched by tensilely strained GaAsP layers. The larger bandgap of the GaAsP layers also provide stronger electron confinement.
© 2001 Optical Society of America
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