Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2001),
  • paper CTuO4

Strain compensated GaAsP/GaAsSb/GaAs 1.3 µm lasers grown on GaAs using MBE

Not Accessible

Your library or personal account may give you access

Abstract

GaAs-based 1.3 μm vertical cavity surface emitting lasers (VCSF.Ls) are highly desirable for optical data communication. One of the most promising approaches is to use GaAsSb/GaAs quantum wells as the laser active region.1 Due to the large compressive strain necessary for the GaAsSb layer to reach 1.3 μm, it can be prohibitive to use multiple QWs without compensating the strain. This paper reports GaAsSb/GaAs active layers sandwiched by tensilely strained GaAsP layers. The larger bandgap of the GaAsP layers also provide stronger electron confinement.

© 2001 Optical Society of America

PDF Article
More Like This
Characterization of GaAsSb/GaAs quantum wells for 1.3 urn VCSELs

M. Dinu, J.E. Cunningham, F. Quochi, and J. Shah
CMH2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2001

Above room temperature CW edge-emitting lasers with GaAsP/GaAs/GaAsSb active regions

S.-Q. Yu, X. Jin, Y. Cao, D. Ding, J.-B. Wang, S. R. Johnson, Y.-H. Zhang, P. Dowd, M. Adamcyk, and S.A. Chaparro
CWL4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2004

Room temperature CW operation of GaAsSb/GaAs VCSELs near 1.3μm

F. Quochi, J.E. Cunningham, D.C Kilper, M. Dinu, and J. Shah
CTuH2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2001

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved