Abstract
High output power in semiconductor lasers is limited by mirror catastrophic damage. In recent years, great effort has been placed in improving material quality to withstand higher optical field intensities. Aluminum-free laser structures are usually a good choice for this purpose, and, particularly, InGaP/GaAs double heterostructure with strained InGaAs quantum well active region are also of great interest for pumping erbium doped fiber amplifiers (EDFA).1
© 2001 Optical Society of America
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