Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 2001 > CThL > CThL59
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2001),
  • paper CThL59

Material gain comparison for InGaAsP, AIGalnAs and InGaAsN for 1.3 micron laser diode

J.C.L. Yong, J.M. Rorison, R.V. Penty, and I.H. White

Not Accessible

Your library or personal account may give you access

Abstract

Recently, AIGalnAs and InGaAsN have received much interest as materials for 1.3micron laser applications in competition with traditional InGaAsP. Both AIGalnAs and InGaAsN have the advantage of large conduction band offsets leading to superior electron confinement.1,2 We compare the gain and transparency carrier density at two temperatures to determine best the modulation response as well as the lowest possible threshold carrier density for uncooled laser applications.

© 2001 Optical Society of America

PDF Article
More Like This
Temperature Dependence of Threshold Current in a 1.3 μm InGaAsN VCSEL: Theory and Experiment

H.C. Schneider, A.J. Fischer, W.W. Chow, J.F. Klem, and K.D. Choquctte
CTuH3 Conference on Lasers and Electro-Optics (CLEO:S&I) 2001

1.3μm InGaAsN VCSELs on GaAs Substrates

J.F. Klem, D.K. Serkland, O. Blum, K.M. Geib, A.W. Jackson, R.L. Naone, M. Dalberth, and J. Smith
CTuH1 Conference on Lasers and Electro-Optics (CLEO:S&I) 2001

InGaAsN quantum well structures for long-wavelength lasers

Henning Riechert
CTuW5 Conference on Lasers and Electro-Optics (CLEO:S&I) 2001

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use