Abstract
Since the invention of mid-infrared (MIR) semiconductor lasers based on inlersubband electron transitions,1 the ultrafast characteristics of such devices are gaining substantial research interest3.5 due to their intrinsic advantages such as high operation speeds and strong optical non linearities. Following the considerable improvement in the performance of CW and quasi-CW MIR lasers, the operation of a gain-switched MIR intersubband semiconductor laser for short pulse production has been reported recently.1
© 2001 Optical Society of America
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