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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2001),
  • paper CML1

InGaAs-InGaAlAs-InP 2.21 μm diode lasers grown in MBE

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Abstract

Long wavelength lasers in the wavelength region 1.6-23,11m are attractive for applications in molecular spectroscopy and remote sensing of atmospheric gases.1,2 As the technology for InPbased 1.55 μm lasers has been well developed in recent years, numerous attempts have been made to use these materials also for lasers emitting at wavelengths above 1.55 μm.1−4

© 2001 Optical Society of America

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