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Conferences > CLEO > 2001 > CMG > CMG5
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2001),
  • paper CMG5

High power 1120 nm—diode lasers with highly strained InGaAs QWs

F. Bugge, G. Erbert, R. Hülsewede, P. Ressel, R. Staske, H. Wenzel, M. Weyers, U. Zeimer, and C. Trankle

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Abstract

Diode lasers in the wavelength range at and beyond 1100 nm are interesting for pumping up-conversion fiber lasers and as sources for Raman amplifiers in telecommunication.

© 2001 Optical Society of America

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