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Conferences > CLEO > 2000 > CWB > CWB6
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2000),
  • paper CWB6

Light emission from a single InGaN quantum dot formed by selective area growth

K. Tachibana, T. Someya, S. Ishida, and Y. Arakawa

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Abstract

InGaN quantum dot (QD) structure has attracted much attention because the lasers with InGaN QDs embedded in the active layer have lower threshold currents and narrower emission spectra than conventional lasers.

© 2000 Optical Society of America

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