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Conferences > CLEO > 2000 > CWA > CWA2
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2000),
  • paper CWA2

High-power 780-nm-band AIGaAs laser diodes with rectangular ridge structure

Y. Nomura, K. Furusawa, S. Okamoto, R. Hiroyama, N. Hayashi, M. Shono, and M. Sawada

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Abstract

A high-power 780-nm-band AIGaAs laser diode with stabilized transverse mode is an attractive light source for recordable optical disc systems. To achieve a high recording speed onto the optical disc, it is necessary to increase the light output power of the laser diode. High power operation of more than 100 mVV for 780-nm-band laser diodes has been reported.1−3

© 2000 Optical Society of America

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