Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2000),
  • paper CMG5

Microcavity-based semiconductor lasers for near- and deep-UV applications

Not Accessible

Your library or personal account may give you access

Abstract

The successful fabrication of the blue (~410 nm) laser diode (LD) was largely due to the realization that the incorporation of indium into GaN was concomitant with a dramatic lowering of the lasing threshold, enhancement of emission intensity, and improvements in temperature characteristics.1

© 2000 Optical Society of America

PDF Article
More Like This
GaN/AIGaN SCH UV semiconductor lasers: Effect of GaN well thickness on lasing efficiency

G.H. Gainer, Y.H. Kwon, I.B. Lam, A. Kalashyan, J.J. Song, S.C. Choi, and G.M. Yang
CMG4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2000

A quasi-continuous wave, optically pumped violet vertical cavity surface emitting laser

Y.-K. Song, H. Zhou, M. Diagne, A.V. Nurmikko, R.P. Schneider, C.P. Kuo, M.R. Krames, R.S. Kern, C. Carter-Coman, and F.A. Kish
CMG7 Conference on Lasers and Electro-Optics (CLEO:S&I) 2000

Biexcitons or bipolaritons in a semiconductor microcavity?

P. Borri, W. Langbein, U. Woggon, J. R. Jensen, and J. M. Hvam
QFC2 International Quantum Electronics Conference (IQEC) 2000

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.