GaN/AIGaN SCH UV semiconductor lasers: Effect of GaN well thickness on lasing efficiency

G.H. Gainer; Y.H. Kwon; I.B. Lam; A. Kalashyan; J.J. Song; S.C. Choi; S.C. Choi; G.M. Yang; G.M. Yang

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2000),
paper CMG4

GaN/AIGaN SCH UV semiconductor lasers: Effect of GaN well thickness on lasing efficiency

G.H. Gainer, Y.H. Kwon, I.B. Lam, A. Kalashyan, J.J. Song, S.C. Choi, and G.M. Yang

Conference on Lasers and Electro-Optics 2000

San Francisco, California United States
7–11 May 2000
ISBN: 1-55752-634-6

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Visible Lasers (CMG)

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G. H. Gainer, Y. H. Kwon, I. B. Lam, A. Kalashyan, J. J. Song, S. C. Choi, and G. M. Yang, "GaN/AIGaN SCH UV semiconductor lasers: Effect of GaN well thickness on lasing efficiency," in Conference on Lasers and Electro-Optics, S. Brueck, R. Fields, M. Fejer, and F. Leonberger, eds., OSA Technical Digest (Optica Publishing Group, 2000), paper CMG4.

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Abstract

GaN active medium structures are attracting much attention for the development of UV laser diodes (LDs) with emission wavelengths lying below 370 nm.

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