Metal-semiconductor-metal traveling-wave-photodetectors

Jin-Wei Shi; Chi-Kuang Sun; Ying-Jay Yang; Ying-Jay Yang

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1999),
paper CWF10

Metal-semiconductor-metal traveling-wave-photodetectors

Jin-Wei Shi, Chi-Kuang Sun, and Ying-Jay Yang

Conference on Lasers and Electro-Optics 1999

Baltimore, Maryland United States
23–26 May 1999
ISBN: 1-55752-570-6

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Poster Session (CWF)

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J. Shi, C. Sun, and Y. Yang, "Metal-semiconductor-metal traveling-wave-photodetectors," in Conference on Lasers and Electro-Optics, C. Chang-Hasnain, W. Knox, J. Kafka, and K. Vahala, eds., OSA Technical Digest (Optica Publishing Group, 1999), paper CWF10.

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Abstract

The bandwidth/efficiency of traditional vertically-illuminated metal-semiconductor-metal (MSM) photodetectors are limited by RC time constant, carrier drift time, and carrier recombination time.

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