Polarization-independent waveguide modulators using 1.57 m-strained InGaAs/InGaAsP quantum wells

Robert E. Bartolo; S.S. Saini; T. Ren. Y. Zhu; M. Dagenais; H. Shen; H. Shen; J. Pamulapati; J. Pamulapati; W. Zhou; W. Zhou; O. King; O. King; F.G. Johnson; F.G. Johnson

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1999),
paper CTuT3

Polarization-independent waveguide modulators using 1.57 m-strained InGaAs/InGaAsP quantum wells

Robert E. Bartolo, S.S. Saini, T. Ren. Y. Zhu, M. Dagenais, H. Shen, J. Pamulapati, W. Zhou, O. King, and F.G. Johnson

Conference on Lasers and Electro-Optics 1999

Baltimore, Maryland United States
23–26 May 1999
ISBN: 1-55752-570-6

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Optical Interconnects and Switching (CTuT)

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R. E. Bartolo, S. S. Saini, T. R. Y. Zhu, M. Dagenais, H. Shen, J. Pamulapati, W. Zhou, O. King, and F. G. Johnson, "Polarization-independent waveguide modulators using 1.57 m-strained InGaAs/InGaAsP quantum wells," in Conference on Lasers and Electro-Optics, C. Chang-Hasnain, W. Knox, J. Kafka, and K. Vahala, eds., OSA Technical Digest (Optica Publishing Group, 1999), paper CTuT3.

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Abstract

The performance of multiple quantum well (MQW) electroabsorption (EA) waveguide modulators based on the Quantum Confined Stark Effect (QCSE) shows considerable promise due to the low drive voltage, enhanced excitonic absorption, and high-speed operation.¹

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