Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1999),
  • paper CTuK49

100 mW fundamental mode laser for 730 nm wavelength based on tensile- strained GaAsP-AIGaAs quantum well structures

Not Accessible

Your library or personal account may give you access

Abstract

Applications in medicine and spectroscopy require fundamental mode lasers with a wavelength between 700 nm and 750 nm.

© 1999 Optical Society of America

PDF Article
More Like This
High power tensile-strained GaAsP-AIGaAs quantum well diode lasers emitting between 718 nm and 735 nm

G. Erbert, F. Bugge, A. Knauer, J. Maege, J. Sebastian, A. Thies, H. Wenzel, M. Weyers, and G. Tränkle
CMI4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1999

730-nm emitting compressively strained InGaAsP quantum well cw diode lasers

A. Al-Muhanna, J. K. Wade, L. J. Mawst, and R. J. Fu
CMD5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998

Hole eigenenergies in GaAsP/AlGaAs single quantum wells with biaxial tensile strain

Daniel C. Bertolet, Jung-Kuei Hsu, and Kei May Lau
TuE7 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved