Lasing in free standing GaN Hexagons

W.P. Herzog, B.B. Goldberg, M.S. Ünlü, R. Singh, and F.P. Dabkowski

Conference on Lasers and Electro-Optics 1999

Not Accessible

Your library or personal account may give you access

Abstract

We present analysis of the lasing characteristics of GaN hexagons fabricated by selective area growth hydride vapor phase epitaxy (SAG-HVPE).

More Like This

Hexagonal facet laser grown by selective area MOCVD

Seigo Ando, Naoki Kobayashi, and Hiroaki Ando
ThI1 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 1995

J. S. E. Jones, A. Sadhanala, A. A. Khan, M. M. Qasim, S. Day, and T. D. Wilkinson
JTu5A.43 CLEO: Applications and Technology (CLEO:A&T) 2016

Seongsik Chang, Nathan B. Rex, Richard K. Chang, Gabel Chong, and Louis J. Guido
CTuU6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1999