Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1999),
  • paper CThK7

Characterising compositional intermixing in GaAs/AlGaAs heterostructures using Raman spectroscopy

Not Accessible

Your library or personal account may give you access

Abstract

Quantum well intermixing (QWI) is attractive as an alternative to regrowth processes,1 which are the main techniques used in realising photonic integrated circuits.2

© 1999 Optical Society of America

PDF Article
More Like This
Investigation of the resolution limit of the hydrogen Plasma Induced Defect Layer Intermixing Process

A. Saher Helmy, B. S . Ooi, and J. H . Marsh
IMH21 Integrated Photonics Research (IPR) 1996

Mach-Zehnder modulators monolithicaliy integrated with Fabry-Perot laser diodes in GaAs/AlGaAs using impurity-free vacancy disordering

A. Saher Helmy, B. S. Ooi, F. Camacho, A. C. Bryce, J. S. Aitchison, R. M. De La Rue, and J. H. Marsh
CME5 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1998

Pulsed-Laser-Induced Quantum Well Intermixing in GaInAs/GaInAsP Laser Structures

T. K. Ong, B. S. Ooi, Y. L. Lam, Y. C. Chan, and Y. Zhou
CWF96 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2000

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.