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Antimonide-based semiconductor lasers, either electrically or optically pumped, have made significant progress in the past few years. Near 2 μm, GalnAsSb/AlGaAsSb quantum-well (QW) diode lasers have exhibited excellent performance, with room-temperature threshold current density as low as 50 A/cm2,1 cw output power more than 1 W from 100-μm aperture,1,2 and diffraction-limited cw power of 600 mW from tapered structures.
© 1999 Optical Society of America
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