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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • (Optica Publishing Group, 1998),
  • paper CWH2

Gain enhancement of low-temperature GaAs heterojunction MSM photodetectors

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Abstract

Molecular beam epitaxy (MBE) growth of the GaAs at temperature ranges of 200 °C and 600 °C substantially affects its optical and electronic properties.

© 1998 Optical Society of America

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