Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • (Optica Publishing Group, 1998),
  • paper CWF32

Cross-sectional scanning tunneling microscopy of InGaAs quantum dots

Not Accessible

Your library or personal account may give you access

Abstract

Quantum dots (QDs) are of interest as a laser medium because their sharply peaked density of states can produce systems with high differential gain. To take full advantage of QDs’ potential for low-threshold devices, dot size uniformity must be maintained to prevent inhomogeneous broadening, and the growth technique should minimize defects causing nonradiative recombination.1

© 1998 Optical Society of America

PDF Article
More Like This
Low-temperature scanning tunneling microscope-induced luminescence of GaN

S. Evoy, C. K. Harnett, H. G. Craighead, T. J. Eustis, W. A. Davis, M. J. Murphy, W. J. Schaff, and L. F. Eastman
CWH6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998

InAs/GaAs Quantum Dot Injection Lasers

M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, M.-H. Mao, D. Bimberg, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, and J.A. Lott
RMB5 Radiative Processes and Dephasing in Semiconductors (RPDS) 1998

Ultrafast Carrier Capture and Relaxation in InGaAs and InAs Self-Organized Quantum Dots

T. Sosnowski, J. Urayama, T. B. Norris, H. Jiang, J. Singh, K. Kamath, J. Phillips, and P. Bhattacharya
RMB2 Radiative Processes and Dephasing in Semiconductors (RPDS) 1998

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved