Carrier confinement in InGa(AI)As tunnel-coupled quantum dot light emitters based on ultrasmall apertures

D.L. Huffaker; L.A. Graham; D.G. Deppe

Conference on Lasers and Electro-Optics
(Optica Publishing Group, 1998),
paper CThX2

Carrier confinement in InGa(AI)As tunnel-coupled quantum dot light emitters based on ultrasmall apertures

D.L. Huffaker, L.A. Graham, and D.G. Deppe

Conference on Lasers and Electro-Optics 1998

San Francisco, California United States
3–8 May 1998
ISBN: 1-55752-540-4

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Novel Laser Structures (CThX)

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D. L. Huffaker, L. A. Graham, and D. G. Deppe, "Carrier confinement in InGa(AI)As tunnel-coupled quantum dot light emitters based on ultrasmall apertures," in Conference on Lasers and Electro-Optics, D. Scifres and A. Weiner, eds., (Optica Publishing Group, 1998), paper CThX2.

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Abstract

Quantum dots (QDs) can be attractive for fabricating ultrasmall volume light emitters that exhibit nonclassic photon statistics.

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