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Conferences > CLEO > 1998 > CMJ > CMJ4
  • Conference on Lasers and Electro-Optics
  • (Optica Publishing Group, 1998),
  • paper CMJ4

Fabrication of narrow far-field InSaAs-InAIGaAs broad-area lasers using quantum well intermixed extended cavities

O. P. Kowalski, C. J. Hamilton, S. D. McDougall, B. Vogele, J. H. Marsh, and A. C. Biyce

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Abstract

InGaAs-InAlGaAs quantum well (QW) structures offer an alternative material system for the fabrication of long-wavelength optoelectronic devices (λ = 1.55 μm) and possess a number of advantages over the more commonly used InGaAsP system including a larger conduction-band offset ratio (ΔEc/Eg),1 simplified growth technology, and significantly greater thermal stability.

© 1998 Optical Society of America

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