Effect of electric field profile on gain- bandwidth product of InGaAs/Si avalanche photodetectors

Weishu Wu; Aaron R. Hawkins; John E. Bowers

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1997),
paper CWO5

Effect of electric field profile on gain- bandwidth product of InGaAs/Si avalanche photodetectors

Weishu Wu, Aaron R. Hawkins, and John E. Bowers

Conference on Lasers and Electro-Optics 1997

Baltimore, Maryland United States
18–23 May 1997
ISBN: 1-55752-498-8

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High-Speed Optoelectronics (CWO)

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W. Wu, A. R. Hawkins, and J. E. Bowers, "Effect of electric field profile on gain- bandwidth product of InGaAs/Si avalanche photodetectors," in Conference on Lasers and Electro-Optics, D. Killinger, G. Valley, C. Chang-Hasnain, and W. Knox, eds., Vol. 11 of OSA Technical Digest (Optica Publishing Group, 1997), paper CWO5.

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Abstract

Avalanche photodetectors (APDs) with high speed and high sensitivity are increasingly attractive for use in modern optical communication systems.

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