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Conferences > CLEO > 1997 > CWM > CWM3
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper CWM3

Record low threshold 840 nm laterally oxidized vertical cavity lasers using AlInGas/AIGaAs strained active layers

Jack Ko, Eric R. Ilegblom, Yuliya Akulova, Brian J. Thibeault, and Larry A. Coldren

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Abstract

By incorporating Al into strained InGaAs QW structures, the emission wavelength can be decreased while still maintaining a desired strain level foy potential improvements in device properties.1,2

© 1997 Optical Society of America

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