Simulation and observation of carrier leakage in 670 nm GaInP quantum well lasers

Damian L Foulger; Peter M. Smowton; Scott Wood; Peter Blood

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1997),
paper CWF32

Simulation and observation of carrier leakage in 670 nm GaInP quantum well lasers

Damian L Foulger, Peter M. Smowton, Scott Wood, and Peter Blood

Conference on Lasers and Electro-Optics 1997

Baltimore, Maryland United States
18–23 May 1997
ISBN: 1-55752-498-8

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CLEO Poster Session: 2 (CWF)

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D. L. Foulger, P. M. Smowton, S. Wood, and P. Blood, "Simulation and observation of carrier leakage in 670 nm GaInP quantum well lasers," in Conference on Lasers and Electro-Optics, D. Killinger, G. Valley, C. Chang-Hasnain, and W. Knox, eds., Vol. 11 of OSA Technical Digest (Optica Publishing Group, 1997), paper CWF32.

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Abstract

A significant difficulty with red-emitting GaInP lasers is the presence of thermally activated carrier leakage at room temperature and the above is due to electron drift and diffusion through the p-cladding layer.

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