Scanning tunneling microscope-induced and scanning electron microscope-Induced cathodoluminescence of GaN grown by molecular beam epitaxy

S. Evoy; H. G. Craighead; W. A. Davis; W. A. Davis; T. J. Eustis; T. J. Eustis; W. J. Schaff; W. J. Schaff; L. F. Eastman; L. F. Eastman

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1997),
paper CTuO2

Scanning tunneling microscope-induced and scanning electron microscope-Induced cathodoluminescence of GaN grown by molecular beam epitaxy

S. Evoy, H. G. Craighead, W. A. Davis, T. J. Eustis, W. J. Schaff, and L. F. Eastman

Conference on Lasers and Electro-Optics 1997

Baltimore, Maryland United States
18–23 May 1997
ISBN: 1-55752-498-8

From the session
III?V Compound Semiconductors (CTuO)

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S. Evoy, H. G. Craighead, W. A. Davis, T. J. Eustis, W. J. Schaff, and L. F. Eastman, "Scanning tunneling microscope-induced and scanning electron microscope-Induced cathodoluminescence of GaN grown by molecular beam epitaxy," in Conference on Lasers and Electro-Optics, D. Killinger, G. Valley, C. Chang-Hasnain, and W. Knox, eds., Vol. 11 of OSA Technical Digest (Optica Publishing Group, 1997), paper CTuO2.

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Abstract

There has been ongoing interest in the growth of high-quality GaN for high-temperature, high-power, and high-frequency optoelectronic applications in the blue spectral region.

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