Abstract
Motivated by the need for a simple and compact pulsed laser source at 1.3 μm and 1.55 μm, we have successfully demonstrated passive Q switching of a diode-pumped Nd: YVO4 microchip laser (200-μm thick) at 1.34 μm and of a diode-pumped Er: Yb: glass microchip laser (1-ram thick) at 1,53 μm.
© 1997 Optical Society of America
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