Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper CFC3

Low dark current metal-semiconductor- metal photodetectors fabricated on GaN

Not Accessible

Your library or personal account may give you access

Abstract

The GaN/AlxGa1XN material system is well suited as a photodetector material for operation in the ultraviolet (UV).l−3

© 1997 Optical Society of America

PDF Article
More Like This
Design of a resonant-cavity-enhanced p-i-n GaN/AlxGa1−xN ultraviolet photodetector

T. Li, J.C. Carrano, C.J. Eiting, P.A. Grudowski, D.J.H. Lambert, H.K. Kwon, R.D. Dupuis, J.C. Campbell, and R.T. Tober
CME6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1999

A Novel Semiconductor-on-Metal MSM Photodetector Design for Dark Current Reduction

S. Mirbaha, R. N. Tait, S. P. McGarry, and N. G. Tarr
JTuB15 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2010

Dark current reduction in InGaAs metal-semiconductor-metal photodetectors with Coplanar waveguide transmission lines

Junghwan Kim, K.J. Lee, F.G. Johnson, W. B, Johnson, and Chi H. Lee
CTuI3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1999

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved