Abstract
We study the effect of a distributed feedback (DFB) structure on the carrier lifetime in a semiconductor laser. In DFB lasers, the spatially inhomogeneous optical intensity along the longitudinal direction of the active region gives rise to spatial hole burning. We show that this inhomogeneous intensity also creates a spatially dependent differential carrier lifetime., and that this spatial dependence exists even when the laser is biased below threshold. The differential carrier lifetimes are measured from the intrinsic microwave modulation responses for a laser biased below threshold.
© 1996 Optical Society of America
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