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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CTuO5

Continuously tuned far-infrared semiconductor laser and its use for investigations

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Abstract

There are a great number of papers devoted to investigations of semiconductor far-infrared (λ ~ 80-200 µm) lasers.1 These lasers are based on intersubband transitions of hot holes. Inversion of population is achieved due to different dynamics of light and heavy holes in crossed electric and magnetic fields. Most of the research was carried out at Faraday configuration of fields (FC): χ║B, where χ is the light wave vector and B is the induction of magnetic field. But it is found2,3 that intensity of radiation is higher for Voight configuration (VC, χ⊥B) due to the greater value of active media gain αg. In this work we directly measured for the first time, to our knowledge, the value of αg for FC and for VC. The emission regions obtained for both configurations are shown in Fig. 1. We observed the emission for the first time at temperatures near 77 K. The intensities of radiation for VC are differed about ten times at the lowest and at the highest temperatures.

© 1996 Optical Society of America

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